Open AccessSTUDIES OF INTERNAL STRESS IN DIAMOND FILMS PREPA-RED BY DC PLASMA CHEMICAL VAPOUR DEPOSITION
Author(s) -
Wanlu Wang,
Gao Jin-Ting,
Kejun Liao,
Anmin Liu
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.1906
Subject(s) - materials science , chemical vapor deposition , carbon film , diamond , thin film , stress (linguistics) , plasma , grain boundary , hydrogen , deposition (geology) , composite material , amorphous solid , internal stress , relaxation (psychology) , methane , stress relaxation , amorphous carbon , nanotechnology , chemistry , creep , microstructure , crystallography , organic chemistry , sediment , philosophy , linguistics , biology , psychology , paleontology , social psychology , quantum mechanics , physics
The internal stress in diamond thin films deposited by DC plasma CVD was studied as a function of methane concentration and deposited temperature. Experimental results have shown that total stress in diamond thin films is sensitive to the deposition conditions. The results also indicate that the compressive stress can be explained in terms of amorphous state carbon and hydrogen, and tensile stress is ascribed to the grain boundary relaxation model due to high internal surface area and micristructure with voids.