Open AccessHETEROEPITAXIAL GROWTH OF ZnSe ON GaAs(lOO) SUBSTRATE BY HOT WALL BEAM EPITAXY
Author(s) -
Jie Wang,
Lyu Hong-Qiang,
Yong Liu,
Xun Wang,
Yao Wen-Hua,
Shen Xiao-Liang
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.1856
Subject(s) - materials science , raman spectroscopy , molecular beam epitaxy , substrate (aquarium) , epitaxy , thin film , crystal (programming language) , crystal growth , spectral line , crystallography , optoelectronics , analytical chemistry (journal) , optics , nanotechnology , chemistry , layer (electronics) , oceanography , physics , geology , computer science , chromatography , astronomy , programming language
ZnSe (100) single crystal films are grown by hot wall beam epitaxy on GaAs (100) substrate. The quality of films are examined by LEED and AES in situ. The films show sharp C(2×2) LEED pattern. When sample are prepared with high growth rate, the Raman spectra show that there are TO modes which are usually forbidden in ZnSe (100) films. ZnSe(100) films with twin can be explained by the TO modes in the Raman spectra. This interpretation is supported by the result of XRD.