EFFECT OF SUBSTRATE TEMPERATURE ON ZnSe FILMS GROWN BY HOT WALL EPITAXY | Zendy

Lü HONG-QIANG | Zendy; Jie Wang | Zendy; Jun Shen | Zendy; Yong Liu | Zendy; Xun Wang | Zendy; WANG CHANG-PING | Zendy; Jianbao Wang | Zendy; Li Chen | Zendy; SHEN XIAO-LIANG | Zendy

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EFFECT OF SUBSTRATE TEMPERATURE ON ZnSe FILMS GROWN BY HOT WALL EPITAXY

Author(s) -

Lü HONG-QIANG,

Jie Wang,

Jun Shen,

Yong Liu,

Xun Wang,

WANG CHANG-PING,

Jianbao Wang,

Li Chen,

SHEN XIAO-LIANG

Publication year - 1992

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.41.1308

Subject(s) - epitaxy , substrate (aquarium) , materials science , photoluminescence , raman scattering , raman spectroscopy , diffraction , layer (electronics) , optoelectronics , crystallography , optics , nanotechnology , chemistry , oceanography , physics , geology

In this paper, we report the results of the growth of a series of ZnSe films on (100) GaAs at different substrate temperatures by hot wall epitaxy. The quality of ZnSe films has been studied by X-ray diffraction, Raman scattering and photoluminescence. The results show that: 1) We have got (100)-oriented single crystal fillms, but the quality becomes worse when lowering the substrate temperature. When the substrate temperature is below 300℃ there appears the (111)-oriented twins in the (100ZnSe. 2) When the substrate temperature is 350℃, Ga atom diffusion from the substrate to the ZnSe epitaxial layer is serious.

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