Open AccessEFFECT OF SUBSTRATE TEMPERATURE ON ZnSe FILMS GROWN BY HOT WALL EPITAXY
Author(s) -
Lyu Hong-Qiang,
Jie Wang,
Jun Shen,
Yong Liu,
Xun Wang,
Changping Wang,
Jianbao Wang,
Li Chen,
Shen Xiao-Liang
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.1308
Subject(s) - epitaxy , substrate (aquarium) , materials science , photoluminescence , raman scattering , raman spectroscopy , diffraction , layer (electronics) , optoelectronics , crystallography , optics , nanotechnology , chemistry , oceanography , physics , geology
In this paper, we report the results of the growth of a series of ZnSe films on (100) GaAs at different substrate temperatures by hot wall epitaxy. The quality of ZnSe films has been studied by X-ray diffraction, Raman scattering and photoluminescence. The results show that: 1) We have got (100)-oriented single crystal fillms, but the quality becomes worse when lowering the substrate temperature. When the substrate temperature is below 300℃ there appears the (111)-oriented twins in the (100ZnSe. 2) When the substrate temperature is 350℃, Ga atom diffusion from the substrate to the ZnSe epitaxial layer is serious.