THE EFFECT OF DOPING CONCENTRATION ON BAND-GAP NARROWING OF p-TYPE GaAs | Zendy

CHENG WEN-QIN | Zendy; MEI XIAO-BING | Zendy; LIU SHUANC | Zendy; LIU YU-LONG | Zendy; Yongkang Li | Zendy; ZHOU JUN-MING | Zendy

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THE EFFECT OF DOPING CONCENTRATION ON BAND-GAP NARROWING OF p-TYPE GaAs

Author(s) -

CHENG WEN-QIN,

MEI XIAO-BING,

LIU SHUANC,

LIU YU-LONG,

Yongkang Li,

ZHOU JUN-MING

Publication year - 1992

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.41.1032

Subject(s) - doping , materials science , dopant , band gap , molecular beam epitaxy , valence band , conduction band , semimetal , photoluminescence , ionization energy , ionization , epitaxy , optoelectronics , condensed matter physics , chemistry , physics , nanotechnology , ion , electron , organic chemistry , layer (electronics) , quantum mechanics

The band-gap narrowing of p-type GaAs as a function of doping concentrafion has been investigated by photoluminescence spectroscopy on samples grown by molecular beam epitaxy on (110) semi-insulating GaAs. It was first found that the band-gap narrowing of p-type GaAs comes from the moving up of valence band, the location of dopant level (band) remains unchanged relative to conduction band, and the ionization energy decreases with the increase of doping concentration.

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