Open AccessTHE EFFECT OF DOPING CONCENTRATION ON BAND-GAP NARROWING OF p-TYPE GaAs
Author(s) -
Cheng Wen-Qin,
Mei Xiao-Bing,
Liu Shuanc,
Yulong Liu,
Li Yong-Kang,
Jian Zhou
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.1032
Subject(s) - doping , materials science , dopant , band gap , molecular beam epitaxy , valence band , conduction band , semimetal , photoluminescence , ionization energy , ionization , epitaxy , optoelectronics , condensed matter physics , chemistry , physics , nanotechnology , ion , electron , organic chemistry , layer (electronics) , quantum mechanics
The band-gap narrowing of p-type GaAs as a function of doping concentrafion has been investigated by photoluminescence spectroscopy on samples grown by molecular beam epitaxy on (110) semi-insulating GaAs. It was first found that the band-gap narrowing of p-type GaAs comes from the moving up of valence band, the location of dopant level (band) remains unchanged relative to conduction band, and the ionization energy decreases with the increase of doping concentration.