Open AccessRAMAN SCATTERING STUDIES OF MBE-GROWN GaAs/Si
Author(s) -
HU FU-YI,
Aizhen Li
Publication year - 1991
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.40.962
Subject(s) - materials science , raman scattering , raman spectroscopy , phonon , scattering , asymmetry , molecular beam epitaxy , x ray raman scattering , condensed matter physics , ultimate tensile strength , optics , epitaxy , composite material , physics , layer (electronics) , quantum mechanics
The origin, profiling and interaction of biaxial compressive and tensile stresses in unan-nealed MBE grown GaAs/Si along the growth direction for thickness range of 500?-4.2μm has been studied by Raman Scattering Spectroscopy measurement. The shift asymmetry of the LO phonon peak was investigated in detail.
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