z-logo
open-access-imgOpen Access
RAMAN SCATTERING STUDIES OF MBE-GROWN GaAs/Si
Author(s) -
Hu Fu-Yi,
Aizhen Li
Publication year - 1991
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.40.962
Subject(s) - materials science , raman scattering , raman spectroscopy , phonon , scattering , asymmetry , molecular beam epitaxy , x ray raman scattering , condensed matter physics , ultimate tensile strength , optics , epitaxy , composite material , physics , layer (electronics) , quantum mechanics
The origin, profiling and interaction of biaxial compressive and tensile stresses in unan-nealed MBE grown GaAs/Si along the growth direction for thickness range of 500?-4.2μm has been studied by Raman Scattering Spectroscopy measurement. The shift asymmetry of the LO phonon peak was investigated in detail.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here