STRUCTURE EFFECT OF SPUTTERRED SILICON CLUSTERS STUDIED BY MEANS OF TIME-OF-FLIGHT METHOD | Zendy

Shurong Liu | Zendy; Weilin Jiang | Zendy; Jiarui Liu | Zendy; Lin Yin-g | Zendy

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STRUCTURE EFFECT OF SPUTTERRED SILICON CLUSTERS STUDIED BY MEANS OF TIME-OF-FLIGHT METHOD

Author(s) -

Shurong Liu,

Weilin Jiang,

Jiarui Liu,

Lin Yin-g

Publication year - 1991

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.40.703

Subject(s) - time of flight , materials science , silicon , mass spectrometry , polycrystalline silicon , mass spectrum , ion , crystallite , amorphous solid , amorphous silicon , time of flight mass spectrometry , analytical chemistry (journal) , enhanced data rates for gsm evolution , atomic physics , optoelectronics , crystalline silicon , optics , nanotechnology , physics , chemistry , crystallography , computer science , telecommunications , layer (electronics) , chromatography , metallurgy , ionization , thin film transistor , quantum mechanics

A Time-of-Flight Mass Spectrometer was developed by modification of a 200kV Ion Im-planter. The time resolution of the 20keV pulsed Ar beam was greatly improved using a part of rising edge of the scanning voltage.Mass distributions of positive and negative microclusters were measured for monocrysta-lline, polycrystalline and amorphous silicon sa microclusters were measured for monocrysta-mass spectra would be strongly related to the structure of the silicon targets.

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