Open AccessSTRUCTURE EFFECT OF SPUTTERRED SILICON CLUSTERS STUDIED BY MEANS OF TIME-OF-FLIGHT METHOD
Author(s) -
Shurong Liu,
Weilin Jiang,
Jiarui Liu,
Lin Ying
Publication year - 1991
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.40.703
Subject(s) - time of flight , materials science , silicon , mass spectrometry , polycrystalline silicon , mass spectrum , ion , crystallite , amorphous solid , amorphous silicon , time of flight mass spectrometry , analytical chemistry (journal) , enhanced data rates for gsm evolution , atomic physics , optoelectronics , crystalline silicon , optics , nanotechnology , physics , chemistry , crystallography , computer science , telecommunications , layer (electronics) , chromatography , metallurgy , ionization , thin film transistor , quantum mechanics
A Time-of-Flight Mass Spectrometer was developed by modification of a 200kV Ion Im-planter. The time resolution of the 20keV pulsed Ar beam was greatly improved using a part of rising edge of the scanning voltage.Mass distributions of positive and negative microclusters were measured for monocrysta-lline, polycrystalline and amorphous silicon sa microclusters were measured for monocrysta-mass spectra would be strongly related to the structure of the silicon targets.