Open AccessHEAVY-ION BACKSCATTERING——A NEW METHOD FOR DETERMINATION OF TRACE HEAVY ELEMENTS ON THE SURFACE AND NEAR SURFACE
Author(s) -
Cheng Huansheng,
Fujia Yang,
Xiangyang Li
Publication year - 1991
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.40.522
Subject(s) - silicon , materials science , arsenic , atomic physics , substrate (aquarium) , ion , heavy ion , atom (system on chip) , impurity , ion beam analysis , beam (structure) , surface (topology) , ion beam , analytical chemistry (journal) , physics , optics , optoelectronics , chemistry , metallurgy , oceanography , geometry , mathematics , chromatography , computer science , embedded system , geology , quantum mechanics
We describe a new technique for MeV heavy-ion backscattering analysis of trace heavy elements on the surface and near surface. Pulse pileup problems are eliminated by choice of incidence ion mass M1, which is the same as or larger then that of bulk atom M2. Using 3 MeV Si beam, we could measure quantities of arsenic implanted in silicon down to 2×1012 atoms/cm2. Experimental results also show that sensitivity for impurity element on silicon substrate is as high as 2.2 ×109 atoms/cm2 for Au.