INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InP | Zendy

Honglie Shen | Zendy; Yang Genqing | Zendy; ZHOU ZU-YAO | Zendy; Zou Shichang | Zendy

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INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InP

Author(s) -

Honglie Shen,

Yang Genqing,

ZHOU ZU-YAO,

Zou Shichang

Publication year - 1991

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.40.476

Subject(s) - materials science , photoluminescence , silicon , saturation (graph theory) , ion implantation , saturation current , optoelectronics , electron , ion , chemistry , electrical engineering , mathematics , combinatorics , voltage , engineering , physics , organic chemistry , quantum mechanics

The electrical properties and characteristics of photoluminescence (PL) at 11K for InP implanted with Si+ at 200℃ have been studied. It has been found that the sheet electron concentration in Si+ simply implanted sample tends to a saturation level with increasing the Si+ dose, while that in Si++P+ dually implanted sample increases greatly. The 11K PL spectra reveals that there exists Sip-Vp complex in Si+ implanted InP, which can be inhibited by co-implanting P+. The mechanism of improved electrical properties by Si++P+ dual implants is, also discussed.

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