Open AccessINVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InP
Author(s) -
Honglie Shen,
Yang Gen-qing,
Zhenghua Zhou,
Shichang Zou
Publication year - 1991
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.40.476
Subject(s) - materials science , photoluminescence , silicon , saturation (graph theory) , ion implantation , saturation current , optoelectronics , electron , ion , chemistry , electrical engineering , mathematics , combinatorics , voltage , engineering , physics , organic chemistry , quantum mechanics
The electrical properties and characteristics of photoluminescence (PL) at 11K for InP implanted with Si+ at 200℃ have been studied. It has been found that the sheet electron concentration in Si+ simply implanted sample tends to a saturation level with increasing the Si+ dose, while that in Si++P+ dually implanted sample increases greatly. The 11K PL spectra reveals that there exists Sip-Vp complex in Si+ implanted InP, which can be inhibited by co-implanting P+. The mechanism of improved electrical properties by Si++P+ dual implants is, also discussed.