X-RAY DOUBLE-CRYSTAL DIFFRACTION STUDY OF HIGH QUALITY GexSi1-x/Si STRAINED LAYER SUPERLATTICE | Zendy

TIAN LIANG-GUANG | Zendy; ZHU NAN-CHANG | Zendy; Jingyi Chen | Zendy; LI RUN-SHEN | Zendy; XU SHUN-SHENG | Zendy; Guoliang Zhou | Zendy

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X-RAY DOUBLE-CRYSTAL DIFFRACTION STUDY OF HIGH QUALITY GexSi1-x/Si STRAINED LAYER SUPERLATTICE

Author(s) -

TIAN LIANG-GUANG,

ZHU NAN-CHANG,

Jingyi Chen,

LI RUN-SHEN,

XU SHUN-SHENG,

Guoliang Zhou

Publication year - 1991

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.40.441

Subject(s) - superlattice , diffraction , materials science , x ray crystallography , x ray , crystal (programming language) , condensed matter physics , quality (philosophy) , layer (electronics) , crystallography , optics , physics , optoelectronics , nanotechnology , chemistry , quantum mechanics , computer science , programming language

In this paper, the analysis of GexSi1-x/Si strained layer superlattice grown by MBE is made by means of X-ray double crystal diffraction. The structure parameters of GexSi1-x/Sisuperlattice is obtained from the simulation of rocking curve based on X-ray kinematical and dynamical diffraction theory respectively. The results calculated with these two theories is almost the same, there is a little difference only in the fine structure of rocking curve. For the high quality GexSi1-x/Si superlattice, the rocking cu rve calculated with X-ray dynamical theory is more close to the experimental curve than that with X-ray kinematical theory.

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