Open AccessX-RAY DOUBLE-CRYSTAL DIFFRACTION STUDY OF HIGH QUALITY GexSi1-x/Si STRAINED LAYER SUPERLATTICE
Author(s) -
Tian Liang-Guang,
Zhu Nan-Chang,
Jingyi Chen,
Li Run-Shen,
Shidang Xu,
Zhou Guoliang
Publication year - 1991
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.40.441
Subject(s) - superlattice , diffraction , materials science , x ray crystallography , x ray , crystal (programming language) , condensed matter physics , quality (philosophy) , layer (electronics) , crystallography , optics , physics , optoelectronics , nanotechnology , chemistry , quantum mechanics , computer science , programming language
In this paper, the analysis of GexSi1-x/Si strained layer superlattice grown by MBE is made by means of X-ray double crystal diffraction. The structure parameters of GexSi1-x/Sisuperlattice is obtained from the simulation of rocking curve based on X-ray kinematical and dynamical diffraction theory respectively. The results calculated with these two theories is almost the same, there is a little difference only in the fine structure of rocking curve. For the high quality GexSi1-x/Si superlattice, the rocking cu rve calculated with X-ray dynamical theory is more close to the experimental curve than that with X-ray kinematical theory.