Open AccessTHE EFFECTS OF NITROGEN CONTENT OF a-SiNx:H ON THE INTERFACE PROPERTIES IN a-Si:H/a-SiNx:H SUPERLATTICES
Author(s) -
Meifang Zhu,
Jingfeng Zong,
Zhang Xiu-Zen
Publication year - 1991
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.40.253
Subject(s) - dangling bond , materials science , nitrogen , photoluminescence , luminescence , analytical chemistry (journal) , spectroscopy , content (measure theory) , asymmetry , infrared , silicon , optics , optoelectronics , chemistry , physics , mathematical analysis , mathematics , organic chemistry , quantum mechanics , chromatography
The effects of nitrogen content on the interfacial properties in a-Si:H/a-SiNx:H superlat-tices have been studies by electroabsorption (EA) photothermal deflection spectroscopy (PDS), photoluminescence (PL) and infrared (IR). The density of interface charges Qs deduced from EA is approximately 1012cm-2. The density of interface states Ni estimated by PDS is 1011cm-2 which is smaller by a factor of 5 than Qs. The nitrogen content x dependences of Qs, Ni and the relative peak intensity of luminescence Ipl exhibit similar behavior and show extreme values at x=xc which is defined as critical value of nitrigen content. The critical values of nitrogen content are in the x range of 0.85-0.95. The measurements of IR reveal that the absorption of N-H bonds increases rapidly with increasing x in the range of 0.6-1.0. The asymmetry of interfaces and a possible mechanism of presence of critical values are discussed-For interpretating the phenomena observed, a model of charged nitrogen dangling bond is suggested.