Open AccessA STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si
Author(s) -
Jie Zhou,
Linfeng Lu,
ZhengFu Han,
J.-Q. Liang
Publication year - 1991
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.40.1827
Subject(s) - molecular beam epitaxy , materials science , deep level transient spectroscopy , schottky diode , optoelectronics , quantum tunnelling , diode , epitaxy , annealing (glass) , silicon , nanotechnology , layer (electronics) , composite material
The electronic characteristics of GaAs grown on Si by molecular beam epitaxy(MBE) has been examined by studying the diode characteristics and deep level transient spectroscopy (DLTS) of Schottky barriers. l-V characteristics of samples show the existence large leakage current. Post-growth rapid thermal annealing(RTA)has been found to be able to significantly improve the diode behaviour. The reverse current in the as-grown material shows a very weak temperature dependence, indicating that its origin is not thermoionic emission or generation-recombination currents. We think that a large part of this current is due to defect-assisted tunneling, which is reduced by RTA. DLTS spectra show that Ec-0.41eV and Ec-0.57eV electron traps are observable. The former is located near the GaAs-Si interface probably, the latter relates to the well-known electron trap M5 typical of MBE GaAs.