Open AccessPICOSECOND PHOTOLUMINESCENCE IN a-Si:H/a-SiNx:H MULTILAYERS
Author(s) -
Huang Xu-Guang,
He-Zhou Wang,
She We-Long,
Qingxing Li,
Yu Zhen-Xin,
Jin Bo,
Peng Shao-qi
Publication year - 1991
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.40.1677
Subject(s) - picosecond , photoluminescence , materials science , electric field , thermalisation , spectroscopy , nitrogen , silicon , molecular physics , optoelectronics , atomic physics , laser , optics , physics , quantum mechanics
The initial dynamics of photogenerated carriers in a-Si:H/a-SiNx:H multilayers has been investigated with time-resolved laser spectroscopy. The mechanisms of thermalization and recombination of these carriers are analysed. The results also reveal that the decay time cutoff, the mobility edge and the band-tail width vary non-monotonously with respect to nitrogen content with a turning point near x = 0.85, which may result from the changes of the internal electric field and the structure of multilayer with nitrogen content.