PICOSECOND PHOTOLUMINESCENCE IN a-Si:H/a-SiNx:H MULTILAYERS | Zendy

Huang Xu-guang | Zendy; WANG HE-ZHOU | Zendy; SHE WE-LONG | Zendy; Qingxing Li | Zendy; YU ZHEN-XIN | Zendy; Jin Bo | Zendy; Shaoqi Peng | Zendy

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PICOSECOND PHOTOLUMINESCENCE IN a-Si:H/a-SiNx:H MULTILAYERS

Author(s) -

Huang Xu-guang,

WANG HE-ZHOU,

SHE WE-LONG,

Qingxing Li,

YU ZHEN-XIN,

Jin Bo,

Shaoqi Peng

Publication year - 1991

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.40.1677

Subject(s) - picosecond , photoluminescence , materials science , electric field , thermalisation , spectroscopy , nitrogen , silicon , molecular physics , optoelectronics , atomic physics , laser , optics , physics , quantum mechanics

The initial dynamics of photogenerated carriers in a-Si:H/a-SiNx:H multilayers has been investigated with time-resolved laser spectroscopy. The mechanisms of thermalization and recombination of these carriers are analysed. The results also reveal that the decay time cutoff, the mobility edge and the band-tail width vary non-monotonously with respect to nitrogen content with a turning point near x = 0.85, which may result from the changes of the internal electric field and the structure of multilayer with nitrogen content.

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