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MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES
Author(s) -
Sheng Zhou Guo-liang
Publication year - 1991
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.40.1121
Subject(s) - superlattice , molecular beam epitaxy , materials science , characterization (materials science) , epitaxy , germanium , optoelectronics , silicon , nanotechnology , layer (electronics)

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