Open AccessA STUDY ON THE PHYSICAL PROCESS OF INDIUM IMPLANTATION BY PULSE LASER AND THE DEFECT PROPERTIES IN n TYPE SILICON
Author(s) -
Kaifeng Liu,
Jing Cai,
Haibin Sun,
Run Yun-Zhu,
Cao Yong-Ming
Publication year - 1990
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.39.88
Subject(s) - indium , materials science , silicon , irradiation , ion implantation , laser , annealing (glass) , deep level transient spectroscopy , impurity , optoelectronics , spectroscopy , analytical chemistry (journal) , atomic physics , ion , optics , metallurgy , chemistry , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics
In this paper, implantation of indium atoms into silicon forming pn juction by Nd-YAG pulse laser irradiation was reported. The indium depth profile in silicon has been determined by secondary ion mass spectrscopy (SIMS) and Rutherford backscatting spectroscopy (RBS). The results can be ascribed to a qualitative model for the physical process of implantation indium in 20ns pulse laser irradiation. Namely, if the laser energy density exceeds a certain threshold, there exist two parts at the surface layer of silicon, silicon-indium molten mixture and liquid state silicon. But only the liquid state silicon layer exists at the surface if the laser energy density does not reach that threshold. The pn juction has good properties revealed by means of I-V and C-V measurements. The results of deep level transient spectroscopy (DLTS) show that there are two kinds of defects in pn juction. One kind of the defects (E1) disappears at 600℃, 60s in rapid thermal annealing (RTA) and the study shows that the defect E1 may be the impurity-vacancy complex. The other defects E2 would not disappear in RTA and may be related to the dislocations.