Open AccessBORON DIFFUSION IN B-DOPED a-SiC:H/UNDOPED a-Si:H HETEROJUNCTIONS
Author(s) -
Fangqing Zhang,
He De-Yan,
Song Zhi-Zhong,
N. Ke,
Guanghua Chen
Publication year - 1990
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.39.1982
Subject(s) - materials science , doping , boron , diffusion , annealing (glass) , heterojunction , analytical chemistry (journal) , silicon , optoelectronics , thermodynamics , composite material , chemistry , nuclear physics , physics , chromatography
The B depth profiles in B-doped a-SiC: H/undoped a-Si: H heteroiunctions have been measured by utilizing the nuclear reaction 11B(p, α)8Be. From the change of B depth profiles, we estimate the coefficients of B diffusion in a-Si:H during preparation and post-deposition annealing. The behaviors of electrically activated B diffusion have also been investigated by conductivity measurements. Based on the recent studies of thermal equilibrium defects in a-Si: H, a simple discussion on the mechanism of B diffusion in a-Si:H is presented in this paper as well.