Open AccessA STUDY ON THE METASTABLE THERMAL DEFECTS IN REACTIVELY SPUTTERED a-SiGe:H FILMS
Author(s) -
Yinyue Wang,
Fangqing Zhang,
Guanghua Chen
Publication year - 1990
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.39.1661
Subject(s) - materials science , metastability , thermal , sputtering , optoelectronics , thin film , condensed matter physics , nanotechnology , physics , thermodynamics , quantum mechanics
Thermally induced metastable defects in reactive sputtered a-SiGe:H films are studied by conductivity σ(T) and heterojunction capacitance-voltage (C-V) measure ments.
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