Open AccessEDGE DISLOCATION IN CRYSTAL DEFECT GAUGE FIELD
Author(s) -
Fei Gao
Publication year - 1990
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.39.1591
Subject(s) - dislocation , peierls stress , enhanced data rates for gsm evolution , materials science , stress field , core (optical fiber) , singularity , condensed matter physics , dislocation creep , gauge (firearms) , field (mathematics) , crystal (programming language) , stress (linguistics) , physics , geometry , composite material , mathematics , finite element method , thermodynamics , computer science , telecommunications , pure mathematics , metallurgy , programming language , linguistics , philosophy
In this paper, the strain and stress field produced by an edge dislocation are expressed by means of continuous dislocation distribution. The stresses inside and outside the core of the edge dislocation are obtained. The dislocation distribution of infinitesimal strength is expressed by crystal defect gauge field, which are calculated under certain gauge condition. In side the core, the stresses are finite when r goes to zero. The singularity of stresses is removed. Finally, the energy of the edge dislocation are calculated.