
SUBBAND STRUCTURE OF GaAs/AlGaAs SUPERLAT-TICES UNDER CROSSED ELECTRIC AND MAGNETIC FIELDS
Author(s) -
Fan Wei-Jun,
Xia Jian-Bai
Publication year - 1990
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.39.1465
Subject(s) - superlattice , condensed matter physics , electric field , magnetic field , materials science , degeneracy (biology) , physics , effective mass (spring–mass system) , quantum mechanics , bioinformatics , biology
The subband structure and optical transition of GaAs/AlGaAs superlattices are investigated in the presence of an electric field applied along the growth direction and a magnetic field parallel to the GaAs/AlGaAs interface by using the effective mass theory. In the presence of the parallel magnetic field, the twofold degeneracy is removed and heavy and light holes are mixed. The presence of the electric field introduces the Stark shift. The magnetic-optical transition probability is also discussed.