Open AccessCALCULATION FOR g-VALUES OF THE AMORPHOUS Si AND AMORPHOUS Si-BASED ALLOY SEMICONDUCTORS
Author(s) -
Yumei Gong,
Guanghua Chen,
Yu-Cheng Su,
Fangqing Zhang
Publication year - 1990
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.39.1441
Subject(s) - cndo/2 , materials science , amorphous semiconductors , amorphous metal , amorphous solid , relaxation (psychology) , amorphous silicon , semiconductor , alloy , molecular orbital , silicon , condensed matter physics , crystallography , optoelectronics , molecule , metallurgy , crystalline silicon , physics , chemistry , quantum mechanics , psychology , social psychology
In this paper, the g-values of the ESR signals in amorphous Si and Si-based alloys have been calculated by using the improved CNDO/2 molecular orbital method. The effects of the structural relaxation on the g-valucs have been also discussed. The calculated results are in accord with the experiments.