Open AccessEXTENDED POTENTIAL MODEL OF TETRAVACANCY IN SILICON
Author(s) -
Shigang Shen,
Fan Xi-Qing,
Dexuan Zhang,
Ren Shang-Yuan
Publication year - 1990
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.39.128
Subject(s) - dangling bond , unpaired electron , character (mathematics) , silicon , electron , materials science , molecular physics , physics , atomic physics , condensed matter physics , quantum mechanics , mathematics , optoelectronics , geometry
In this paper, using the extended potential model, the symmetrized wavefuntion of the unpaired electron of tetravacancy (V4-) in silicon is calculated. We obtain the localization parameters η2, s-character fractions α2, p-character fractions β2 and hyper-fine constants of the unpaired electron on atoms nearest to the defect. V4- is determined for A1(C3v) symmetric state of the energy 0.78eV. Theoretical values are compatible with the existing experiments. Our results point out that η2 on single dangling bond of V4- is smaller than that of other defects with single dangling bond, this is because the potential distribution for V4- deviates from the single dangling bond case.