Open AccessINVESTIGATION OF MECHANISM FOR SOLID PHASE REACTION BY RAPID THERMAL ANNEALING IN Ti-Si SYSTEM
Author(s) -
Chen Cun-Li,
Jiannian Li,
Wen-yu Hua
Publication year - 1990
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.39.127
Subject(s) - materials science , raman spectroscopy , annealing (glass) , raman scattering , metastability , diffraction , analytical chemistry (journal) , torr , titanium , electron diffraction , optics , metallurgy , chemistry , thermodynamics , physics , organic chemistry , chromatography
Titanium films are deposited on Si wafers by electron-beam evaporation in vacuum, the base pressure of the system is 10-7 Torr. Solid phase reaction results through rapid thermal annealing. After annealed at 540-600℃, two metastable phase diffraction peaks of Ti5Si4 are observed in X-ray diffraction (XRD) pattern. Prolonging the annealing time, the first nucleated phase Ti5Si4 remains unchanged until titanium is completely consumed, then it transforms into a stable phase TiSi2. When the annealing tcmpeiature is above 640℃, a stable phase TiSi2 is formed. The researches of sheel resistance and Raman scattering give the results which are in good agreement with XRD. The two Raman peaks at 207 and 244 cm-1 are characteristic Raman peaks of TiSi2, but the other three Raman peaks at 270, 297 and 341 cm-1 are likely attributed