Open AccessINVESTIGATION OF SURFACE PHONONS AT IDEAL, RELAXED AND 2×1 RECONSTRUCTED Si(lll) SURFACE
Author(s) -
Lin Zi-Jing,
Kelin Wang
Publication year - 1989
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.38.891
Subject(s) - surface phonon , phonon , surface (topology) , semiconductor , physics , condensed matter physics , silicon , materials science , surface reconstruction , dispersion (optics) , perturbation (astronomy) , relaxation (psychology) , molecular physics , optics , quantum mechanics , optoelectronics , geometry , psychology , social psychology , mathematics
Using the perturbation method to study the influence of the coupling between occupied states and empty states on the electronic band energy, we obtained analytical expressions for semiconductor force constant calculation within the scheme of extended band orbital approximation. The surface phonon dispersion curves and related vibrational amplititude distribution of Si(111) ideal, 1×1 relaxed and 2×1 reconstructed Haneman model surfaces are calculated by means of these expressions. The results for different surfaces show the important effects of surface relaxation and reconstruction on the properties of surface phonons. It is also shown that the Haneman model for Si(111)-2×1 reconstructed surface can not explain the experimental surface phonon measurement very well.