Open AccessMECHANISM OF ION BEAM MIXING OF Mo LAYER ON Si
Author(s) -
Wenyu Gao,
Hongcheng Li,
Ruilan Wang,
Jiarui Liu
Publication year - 1989
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.38.728
Subject(s) - ion , ion beam mixing , materials science , mixing (physics) , diffusion , cascade , vacancy defect , atomic physics , collision cascade , ion beam , thermal , ion implantation , molecular physics , ion beam deposition , thin film , chemistry , nanotechnology , thermodynamics , physics , sputtering , crystallography , organic chemistry , chromatography , quantum mechanics
Backscattering spectrometry is used to systematically investigate the temperature, dose and dose-rate dependences of Mo/Si atomic mixing and reaction induced by 170 keV Ar+ ions and 300 keV Xe2+ ions. These results show that the ion beam mixing mechanism of Mo/Si system is not vacancy diffusion and intra-cascade interstitial diffusion, and the thermal spike model also does not apply. We suggest that thhe mechanism of Mo/Si atomic mixing induced by ion implantation should be interstitial diffusion and give a reaction model. Based on this concept, the experimental results can be explained.