
XRD STUDY OF N2+ IMPLANTED Si
Author(s) -
Ma De-Lu,
Shang Deying,
Jingjie Yu
Publication year - 1989
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.38.579
Subject(s) - materials science , diffraction , annealing (glass) , simulated annealing , distribution function , kinematics , strain (injury) , basis (linear algebra) , analytical chemistry (journal) , computational physics , thermodynamics , optics , composite material , geometry , algorithm , physics , mathematics , chemistry , classical mechanics , medicine , chromatography
The distributions of X-ray diffraction (XRD) of N2+ (180 keV) implanted Si are presented. On the basis of trial and error strain function and multilayer model, according to kinematic theory of XRD, with Levenberg-Marqardt optimization method to simulate experimental curve we computed the strain distribution as the functions of depth, dose and annealing temperature. The results are analysed and discussed.