Open AccessOPTICAL AND ELECTRICAL PROPERTIES OF SPUTTERED AMORPHOUS GeNx AND GeNx:H FILMS
Author(s) -
Guanghua Chen,
Fangqing Zhang,
Gui Jing-Zhong
Publication year - 1989
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.38.573
Subject(s) - amorphous solid , materials science , condensed matter physics , crystallography , physics , chemistry
Technological conditions and basic photoele tronic properties of a-GeNx and a-GeNx:H films prepared by an rf-reactive sputtering method are reported. The IR and Raman specrta are presented. The effects of N content on ΔE and IR and Raman spectra of a-GeNx:H film are also discussed.