Open AccessA STUDY OF GaAs(110) SURFACE RELAXATION WITH LOW-ENERGY-ELECTRON-DIFFRACTION
Author(s) -
Lan Tian,
XU Feiyue
Publication year - 1989
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.38.357
Subject(s) - materials science , bond length , relaxation (psychology) , electron diffraction , electron , condensed matter physics , rotation (mathematics) , atomic physics , surface (topology) , diffraction , molecular physics , crystallography , physics , crystal structure , optics , chemistry , geometry , nuclear physics , psychology , social psychology , mathematics
We have studied the surface relaxation of GaAs (110) with Low-Energy-Electron-Diffra-cion. We find that the best agreemet between theory and experiment is obtained for such a structure in which the As atoms are tilted outward by 0.10±0.02? and the Ga atoms are tilted inward by 0.55±0.02?, with an angle of rotation (ω) of 27.32°±0.24°, keeping the bond length at surface As-Ga unchanged and a Ga to secondlayer spcing d2= 1.45±0.01?and the second-layer Ga to third-layer spcing d3 = 2.01±0.01?. For this structure, the As back bond length lAs =2.43±0.01? (contracted 0.56%) and the Ga back bood length lGa=2.235±0.004?(contracted 8.0%)