Open AccessAN INVESTIGATION OF DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY THERMOSTI-MULATED CONDUCTIVITY SPECTRA
Author(s) -
ZHU MEI-FANG,
Zhengyi Xu
Publication year - 1989
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.38.1988
Subject(s) - density of states , conductivity , condensed matter physics , fermi level , spectral line , materials science , semiconductor , amorphous solid , amorphous semiconductors , fermi energy , band gap , physics , atomic physics , thin film , chemistry , quantum mechanics , nanotechnology , electron , optoelectronics , organic chemistry
Determination of the density of states in the uper half of gap in a-Si:H film and a-Si:H/a-SiNx: H superlattices were obtained by a more comprehensive theoretical analysis of the thermostimulated comductivity. The results are consistent with that of Fritzsche's analysis. The main features of the two different analytical approaches and the correlation between maximnm chermostimulated current emission energy Em and quasi-Fermi level were discussed. The results show that the thermostimulated conductivity in a-Si: H should be analysed in weak recombination condition. In consequence, retrapping of the thermostimulated carriers can not be negleted. Theory of Gu et al. improves the analysis of measurement of thermostimulated conductivity.