STUDIES OF SURFACE LAYER ATOMIC STRUCTURE OF Al(100) BY MeV ION SCATTERING
Author(s) -
Cheng Huansheng,
CUI ZHI-XIANG,
Hongjie Xu,
Yao Xiao-Wei,
Yang Fujia
Publication year - 1989
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.38.1981
Subject(s) - materials science , ion , atom (system on chip) , scattering , atomic physics , relaxation (psychology) , layer (electronics) , surface layer , surface (topology) , crystal (programming language) , molecular physics , optics , physics , nanotechnology , programming language , psychology , social psychology , geometry , mathematics , quantum mechanics , computer science , embedded system
The experimental method and facilities for studing surface and interface atomic structure by MeV ion scattering are described. The crystal preparation and cleaning procedure of Al (100) are presented. The MeV ion channeling and scattering experiments indicate the themal vibration amplitude of Al(l00) surface atom is 1.2-1.3 times greater than that of bulk atoms. The relaxation of Al(l00) first layer atom is less then -0.05?.
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