RELATIONSHIP BETWEEN NEW DONOR AND OXIDE PRECl-PITATES IN ANNEALED CZ-SILICON | Zendy

Jiaquan Li | Zendy; Xiao Zhigang | Zendy; Jun Ke | Zendy

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RELATIONSHIP BETWEEN NEW DONOR AND OXIDE PRECl-PITATES IN ANNEALED CZ-SILICON

Author(s) -

Jiaquan Li,

Xiao Zhigang,

Jun Ke

Publication year - 1989

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.38.1727

Subject(s) - dangling bond , materials science , silicon , cristobalite , annealing (glass) , oxide , crystallographic defect , ionization , hall effect , crystallography , optoelectronics , electrical resistivity and conductivity , metallurgy , ion , chemistry , quartz , organic chemistry , engineering , electrical engineering

New donor and oxygen precipitate in CZ-silicon are studied by means of Hall measurement, IR measurement and TEM observation. Two types of defect are observed in specimens annealed at 650-750℃, that is, rod-like defects and plate-like defects. New donor generation is mainly related to the plate-like defects, which are indentified as β-cristobalite according to the H-REM results. It is suggested that the new donor originates from the ionization of dangling bonds of silicon atoms on precipitates/matrix interfaces and is controlled by the neucleation and growth of β-cristobalite precipitates.

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