Open AccessPHOTOREFLECTANCE SPECTROSCOPY OF MBE GaAs1-x Sbx/GaAs STRAINED LAYER QUANTUM WELL
Author(s) -
Chi Jian-Gang,
Zhao Wen-Qin,
Aizhen Li
Publication year - 1989
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.38.1710
Subject(s) - materials science , conduction band , layer (electronics) , condensed matter physics , quantum well , electronic band structure , spectroscopy , band gap , electronic structure , strain (injury) , gallium arsenide , optoelectronics , physics , optics , electron , laser , nanotechnology , quantum mechanics , medicine
The MBE GaAs1-xSbx/GaAs strained layer quantum well has been investigated by means of photoreflectance measurement. The energy band structure has been estimated by theoretical fitting with the experimental results. We confirmed that the variations of band structure caused by hydrostatic component of the strain mainly exist in conduction band, and that MBE GaAs1-xSbx/GaAs strained layer quantum well is a typical one of type Ⅱ. The theoretical estimation coincide well with our experimental results.