INTRODUCTION OF Ce INTO Si AND THE DIFFUSION COEFFICIENT OF Ce IN Si | Zendy

FU CHUN-YIN | Zendy; Yongling Lu | Zendy; ZENG SHU-RONG | Zendy

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INTRODUCTION OF Ce INTO Si AND THE DIFFUSION COEFFICIENT OF Ce IN Si

Author(s) -

FU CHUN-YIN,

Yongling Lu,

ZENG SHU-RONG

Publication year - 1989

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.38.1534

Subject(s) - materials science , annealing (glass) , wafer , electrical resistivity and conductivity , diffusion , analytical chemistry (journal) , alloy , silicon , effective diffusion coefficient , metallurgy , nanotechnology , thermodynamics , chemistry , physics , engineering , chromatography , electrical engineering , medicine , radiology , magnetic resonance imaging

Ce has been introduced into single crystal Si by means of vacuum deposition of Ce onto Si wafer, and then annealing at 1050℃ for 20 hours in vacuum.In the annealing process, Ce-Si alloy was formed on the surface at first, and then the Ce atorms diffused into Si and produced a diffusion region of Ce with thickness about 4.5 μm. The concentration profile of Ce was determined by SIMS. The diffusion coefficient of Ce in Si at 1050℃ was obtained as 3.9×10-13 cm2/s. The average resistivity ρ of the Ce diffusion layer was measured from 77K to 450K.

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