Open AccessINTRODUCTION OF Ce INTO Si AND THE DIFFUSION COEFFICIENT OF Ce IN Si
Author(s) -
Fu Chun-Yin,
Yongling Lu,
Zeng Shu-Rong
Publication year - 1989
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.38.1534
Subject(s) - materials science , annealing (glass) , wafer , electrical resistivity and conductivity , diffusion , analytical chemistry (journal) , alloy , silicon , effective diffusion coefficient , metallurgy , nanotechnology , thermodynamics , chemistry , physics , engineering , chromatography , electrical engineering , medicine , radiology , magnetic resonance imaging
Ce has been introduced into single crystal Si by means of vacuum deposition of Ce onto Si wafer, and then annealing at 1050℃ for 20 hours in vacuum.In the annealing process, Ce-Si alloy was formed on the surface at first, and then the Ce atorms diffused into Si and produced a diffusion region of Ce with thickness about 4.5 μm. The concentration profile of Ce was determined by SIMS. The diffusion coefficient of Ce in Si at 1050℃ was obtained as 3.9×10-13 cm2/s. The average resistivity ρ of the Ce diffusion layer was measured from 77K to 450K.