Open AccessPHOTOLUMINESCENCE STUDIES ON InxGa1-xAs-GaAs STRAINED QUANTUM WELLS STRUCTURE UNDER HYDROSTATIC PRESSURE
Author(s) -
Lijun Wang,
Hou Hong-Qi,
Jian Zhou,
Tang Ru-Ming,
Lu Zhi-Dong,
Yanyun Wang,
Huang Yi
Publication year - 1989
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.38.1086
Subject(s) - quantum well , hydrostatic pressure , photoluminescence , heterojunction , materials science , band offset , condensed matter physics , molecular beam epitaxy , conduction band , epitaxy , optoelectronics , electron , physics , band gap , valence band , optics , laser , nanotechnology , layer (electronics) , thermodynamics , quantum mechanics
In this article we report the results of photoluminescence studies on In0.25Ga0.75 As-GaAs straiaed quantum wells grown by molecular beam epitaxy under pressure at 77 K. The applied hydrostatic pressure ranges from 0 to 50 kbar. The pressure coefficients of T valley of (InGa)As-GaAs strained quantum wells are presented. We have observed the crossover between the energy level in the well and X valley in the barrier GaAs. With the analysis of its behavior under pressure, the ratio of conduction band offset to valence band offset in In0.25 Ga0.75 As-GaAs heterojunction is determined as Qc =△Ec:△Ev = 0.68:0.32. The theoretical studies on (InGa) AsGaAs strained quantum wells under normal pressure fit the experimental results very well. Some discussions about (AlGa)As-GaAs quantum wells are also included in this paper.