Open AccessTHE PROXIMITY EFFECT AND MUTUAL DIFFUSION IN a-Ge/Ag LAYERS
Author(s) -
Yuheng Zhang,
Hongbao Liu
Publication year - 1988
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.37.950
Subject(s) - materials science , amorphous solid , electrical resistivity and conductivity , composite number , diffusion , layer (electronics) , composite material , crystallography , thermodynamics , electrical engineering , chemistry , physics , engineering
In the present work, the behaviors of a-Ge/Ag composite layers are studied. These layers are composed of amorphous Ge film with thickness 2000 ? and Ag film with different thickness. It is found that, when the thickness of Ag film decreases, the electrical resistivity of the composite layer at room temperature becomes more and more smaller than that of Ag mono-layer with the same thickness. The proximity effect at room temperature is shown clearly by experiment. As the samples are annealed, we obtain various R(Ta)-T relations under different annealling temperature Ta and various dependences of R300k on Ta for layers withe different thickness of Ag film. Based on structural analysis by XRD and composition analysis by EMP, and observation with TEM and SEM, the new phenomena are explained.