Open AccessPHOTOLUMINESCENCE DIAGNOSIS OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS
Author(s) -
Wei Jia,
Lu Zhi-Dong,
Huang Yi,
Jian Zhou,
Li Yung-Kang,
Yanyun Wang
Publication year - 1988
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.37.906
Subject(s) - photoluminescence , quantum well , impurity , molecular beam epitaxy , materials science , spectral line , quantum , quality (philosophy) , optoelectronics , aluminium , epitaxy , condensed matter physics , optics , physics , nanotechnology , quantum mechanics , composite material , laser , layer (electronics)
Photoluminescence technique are used to diagnose the quality of quantum wells. The influences on the fluorescence spectra of quantum wells due to thickness fluctuations of quantum wells, fluctuation of aluminium content, various defects, and unintentional impurities, are discussed. And inversely, the possible reasons causing degradation of quantum wells are deduced from the photoluminescence spectra. To some extent the diagnosis can provide certain basic information for improving the molecular beam epitaxy technology.