Open AccessELECTRONIC TRANSPORT PROPERTIES OF HIGH CONDUCTIVITY a-Si:H:Y ALLOY
Author(s) -
Xing-kui Cheng,
Wei Zhao,
Dai Griffiths
Publication year - 1988
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.37.481
Subject(s) - materials science , impurity , alloy , thermal conduction , conductivity , doping , atmospheric temperature range , substrate (aquarium) , conduction band , condensed matter physics , electrical resistivity and conductivity , band gap , sputtering , analytical chemistry (journal) , thermodynamics , thin film , optoelectronics , metallurgy , nanotechnology , composite material , physics , electron , chemistry , oceanography , chromatography , quantum mechanics , geology
The high conductivity a-Si:H:Y alloy films prepared by rf sputtering have been obtained. The room temperature d.c. conductivity is about 2×101 Ω-1·cm-1 as Y doping concentration reaches 20 at %. Measurements showed that the alloy films are of n-type. The plots of In a versus 1/T over temperature range investigated can be fitted by two straight lines with a kink occurring at a temperature which is 70℃, 75℃ and 90℃, respectively, for samples deposited at substrate temperature T2 = 260℃, 290℃ and 330℃. Present results may be explained on the assumption that there are two parallel transport paths, one above kink temperature takes place in the conduction band and another below kink temperature in the Y-rela-ted donor impurity band, Moreover, we estimated that the center of the impurity band lies about 0.06-0.07 eV below the conduction band EC.