Open AccessWEAK LOCALIZATION AND INTERACTION EFFECTS IN THE LOW TEMPERATURE RESISTIVITY AND MAGNETORESISTANCE OF DISORDERED Cu33Y67
Author(s) -
Yan-Fei Li
Publication year - 1988
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.37.248
Subject(s) - weak localization , magnetoresistance , electrical resistivity and conductivity , condensed matter physics , scattering , materials science , alloy , giant magnetoresistance , amorphous solid , physics , magnetic field , chemistry , optics , quantum mechanics , metallurgy , crystallography
The electrical resistivity and magnetoresistance of amorphous Cu33Y67 alloy has been measured. The alloy was prepared by melt-spinning in He gas. Interaction effect can provide a good quantitative explanation for the temperature depen-dence of the electrical resistivity at low temperatures with a main contribution of the form of T1/2 below 4.5 K. Its variation at higher temperatures can also be explained by a combination of interaction and weak localization effects. The magnetoresistance measurements up to 1.8 Tesla reveals predominant localization effects with a strong influence of the spin-orbit scattering. The data are rather larger than that predicted by weak localization. An overall good fit is obtained if one increases the theoretically predicted strength of localization by 3 times. One fitting parameter, spin-orbit scattering time τ50, is unchanged, while inelastic scattering time τi's used fitting to two set of the data of resistivity and magnetoresistance are close to each other.