Open AccessTHE HALL EFFECT IN RF-SPUTTERED IRON OXIDE THIN FILMS
Author(s) -
You Guang-Jian,
Yu Mei,
Luo Hui-Lin
Publication year - 1988
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.37.1613
Subject(s) - hall effect , condensed matter physics , materials science , electrical resistivity and conductivity , thin film , scattering , polaron , film plane , perpendicular , magnetic field , electron , physics , optics , magnetic anisotropy , nanotechnology , magnetization , geometry , mathematics , quantum mechanics
Hall effect measurements were carried out on rf-sputtered Fe3O4 and γ-Fe2O3 thin films in magnetic field up to 1.4 T applied perpendicular to the film plane. Their ordinary and extraordinary coefficients are determined from the experimental data. The calculated values of the Hall mobilities for these two films are 2.35 and 1.56cm2/V·s respectively, which are larger than 1 cm2/V·s, suggesting the occurrence of large polaron scattering. The extraordinary Hall effects were compared by using Berger side-jumping model. The negative magnetic resistivity is also observed for these two films.