Open AccessA STUDY ON THE PROPERTIES OF SiO2 THIN FILM THERMALLY NITRIDED IN AMMONIA AND ITS INTERFACE
Author(s) -
M. Qi,
Luo Jin-Sheng
Publication year - 1988
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.37.1600
Subject(s) - nitriding , materials science , annealing (glass) , ammonia , fixed charge , thin film , refractive index , electron , penning trap , chemical engineering , chemical physics , composite material , optoelectronics , nanotechnology , layer (electronics) , chemistry , physics , organic chemistry , quantum mechanics , engineering
The properties of thermally nitrided SiO2 thin film and its interface have been studied. It is found that the chemical composition, refractive index, electron trap parameters, surface mobility, fixed charge and interfacial state densities are dependent obviously on the annealing condition in ammonia. The mechanism of nitridation, anti-oxidation, and the effect of nitridation on interfacial characteristics are discussed.