A STUDY ON THE PROPERTIES OF SiO2 THIN FILM THERMALLY NITRIDED IN AMMONIA AND ITS INTERFACE | Zendy

Ming Qi | Zendy; Jinsheng Luo | Zendy

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A STUDY ON THE PROPERTIES OF SiO2 THIN FILM THERMALLY NITRIDED IN AMMONIA AND ITS INTERFACE

Author(s) -

Ming Qi,

Jinsheng Luo

Publication year - 1988

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.37.1600

Subject(s) - nitriding , materials science , annealing (glass) , ammonia , fixed charge , thin film , refractive index , electron , penning trap , chemical engineering , chemical physics , composite material , optoelectronics , nanotechnology , layer (electronics) , chemistry , physics , organic chemistry , quantum mechanics , engineering

The properties of thermally nitrided SiO2 thin film and its interface have been studied. It is found that the chemical composition, refractive index, electron trap parameters, surface mobility, fixed charge and interfacial state densities are dependent obviously on the annealing condition in ammonia. The mechanism of nitridation, anti-oxidation, and the effect of nitridation on interfacial characteristics are discussed.

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