Open AccessTHE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H
Author(s) -
Zhichao Wang,
TENG MIN-KANG,
Shu-yi Zhang,
GE WANG-DA,
Shu-ye Qiu
Publication year - 1988
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.37.1291
Subject(s) - spectrometer , recombination , materials science , annihilation , photoacoustic imaging in biomedicine , positron annihilation , optoelectronics , atomic physics , positron , optics , physics , chemistry , nuclear physics , electron , biochemistry , gene
The defects and the nonradiative recombination of photogenerated carriers in a-Si:H and a-SiNx:H films are studied by using infrared spectrometer, spectrophotometer, photoacoustic Spectrometer and positron annihilation life-time spectrometer from various respects.
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