Open AccessHALF WAVELENGTH AND STOPPING POWER FOR PLANAR CHANNELED 4He+ IONS IN Al AND Si CRYSTALS
Author(s) -
Jin WeiGuo,
Guanghui Zhao
Publication year - 1988
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.37.1131
Subject(s) - stopping power , wavelength , ion , planar , spectral line , atomic physics , energy (signal processing) , resolution (logic) , materials science , physics , limit (mathematics) , power (physics) , optics , mathematical analysis , computer graphics (images) , mathematics , quantum mechanics , astronomy , artificial intelligence , computer science
Using a detection system with high resolution, backscattering spectra for 1-2 MeV 4He+ incident along Al (100) and Si(l00) and (110) planes are measured at a variety of entrance (θin) and exit (θout) angles. The energy intervals between the peaks in the energy spectra are plotted as a function of cosθin/cosθout Half wavelength and stopping power for 1-2 MeV 4He+ in these three channeling planes are obtained. The experimental half wavelength is in agreement with the calculated value within the limit of error and the planar channeled stopping power is slightly greater than the random stopping power.