Open AccessDOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES
Author(s) -
Shulin Wang,
Cheng Ru-Guang
Publication year - 1988
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.37.1119
Subject(s) - superlattice , doping , materials science , shutter , optoelectronics , condensed matter physics , optics , physics
A new class of a-Si:H/doped a-SiNx:H superlattices with fixed sublayer thicknesses and NH3/SiH4 ratio, but varying gaseous doping level in a-SiNx:H sublayers, has been sythesized by using equipped shutter deposition system. It is shown that the position of the Fermi level in superlattices can be controlled through doping in a-SiNx:H sublayers, that means that a-Si:H/a-SiNx:H superlattices can be changed from n-type to p-type depending on the B doping level in a-SiNx:H sublayer. However, the trasport property of a-Si:H/a-SiNx:H super-lattices is not affected very much by the P doping in a-SiNx:H sublayers.