Open AccessNEW C-V CHARACTERISTIC OF Si pn DIODES PREPARED BY MOLECULAR BEAM EPITAXY
Author(s) -
Peng Cheng,
Sheng Chen,
Haibin Sun
Publication year - 1988
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.37.1025
Subject(s) - molecular beam epitaxy , impurity , materials science , diode , doping , optoelectronics , semiconductor , layer (electronics) , silicon , enhanced data rates for gsm evolution , epitaxy , space charge , chemistry , nanotechnology , physics , telecommunications , organic chemistry , quantum mechanics , computer science , electron
The C-V characteristic of a silicon p-n diode grown by molecular beam epitaxy (MBE) technique was carefully studied in the case that the space charge region reached the edge of MBE layer. Based on the theoretical analysis and experimental measurement, the impurity concentration in unintentionally doped n-type MBE layer was determined to be 8.0×1014cm-3. This method is shown to be a new way to find out impurity concentrations in supper-thin semiconductor layers.