
STUDY OF THE DEFECTS IN OXYGEN PLASMA IRRADIATED n/n+ Si
Author(s) -
Fangping Wang,
Jun Xu,
Haibin Sun
Publication year - 1987
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.36.646
Subject(s) - irradiation , materials science , coupling (piping) , oxygen , phonon , atomic physics , plasma , spectroscopy , condensed matter physics , physics , nuclear physics , quantum mechanics , metallurgy
The defects in oxygen plasma irradiated Si have been studied. It is found that two kinds of defects E1(Ec-0.46 eV) and E2 (Ec-0.04 eV) are generated in the sample. The deep level optical spectroscopy reveals that defects E2 has a strong electron-phonon coupling, its Frank-Condon shift is 0.76 eV. For E1, the coupling is weaker, its Frank-Condon shift is 0.04 eV. The analysis shows that the phonon modes coupling to defects E1 and E2 is 28.7 meV and 20 meV respectively.