STUDY OF THE DEFECTS IN OXYGEN PLASMA IRRADIATED n/n+ Si | Zendy

WANG FANG-PING | Zendy; XU Jian-guo | Zendy; SUN HENG-HUI | Zendy

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STUDY OF THE DEFECTS IN OXYGEN PLASMA IRRADIATED n/n+ Si

Author(s) -

WANG FANG-PING,

XU Jian-guo,

SUN HENG-HUI

Publication year - 1987

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.36.646

Subject(s) - irradiation , materials science , coupling (piping) , oxygen , phonon , atomic physics , plasma , spectroscopy , condensed matter physics , physics , nuclear physics , quantum mechanics , metallurgy

The defects in oxygen plasma irradiated Si have been studied. It is found that two kinds of defects E1(Ec-0.46 eV) and E2 (Ec-0.04 eV) are generated in the sample. The deep level optical spectroscopy reveals that defects E2 has a strong electron-phonon coupling, its Frank-Condon shift is 0.76 eV. For E1, the coupling is weaker, its Frank-Condon shift is 0.04 eV. The analysis shows that the phonon modes coupling to defects E1 and E2 is 28.7 meV and 20 meV respectively.

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