Open AccessSTATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H
Author(s) -
Guanghua Chen,
Peng Ying-Quan,
Jihong Chen
Publication year - 1987
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.36.524
Subject(s) - doping , impurity , materials science , cover (algebra) , condensed matter physics , mechanism (biology) , physics , statistical physics , engineering physics , quantum mechanics , mechanical engineering , engineering
This article present a multi-level model on the doping mechanism and defect state in the gap of a-Si:H films, and calcnlate the doping efficiency η using the method of statistical physics. It was found that the results from the model and calculation not only cover all arguments of Street et al., but also make a distinction between heavy and light doping. The η of light doping agrees with usual results, only heavy doping obeys η∝?-1/2low.