STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H | Zendy

Guanghua Chen | Zendy; Peng Ying-Quan | Zendy; Jihong Chen | Zendy

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STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H

Author(s) -

Guanghua Chen,

Peng Ying-Quan,

Jihong Chen

Publication year - 1987

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.36.524

Subject(s) - doping , impurity , materials science , cover (algebra) , condensed matter physics , mechanism (biology) , physics , statistical physics , engineering physics , quantum mechanics , mechanical engineering , engineering

This article present a multi-level model on the doping mechanism and defect state in the gap of a-Si:H films, and calcnlate the doping efficiency η using the method of statistical physics. It was found that the results from the model and calculation not only cover all arguments of Street et al., but also make a distinction between heavy and light doping. The η of light doping agrees with usual results, only heavy doping obeys η∝?-1/2low.

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