Open AccessTHE LOW FREQUENCY EFFECTS OF TRANSVERSE CONDUCTIVITY OF ELECTRON IN LOCALIZED STATE OF THE TWO DIMENSIONAL ELECTRON GAS IN MOS INVERSION LAYER UNDER THE CONDITION OF QUANTIZED LIMIT
Author(s) -
Zhao Leng-zhu
Publication year - 1987
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.36.411
Subject(s) - fermi gas , conductivity , electron , condensed matter physics , thermal conduction , inversion (geology) , physics , transverse plane , electrical resistivity and conductivity , low frequency , materials science , quantum mechanics , paleontology , structural engineering , structural basin , astronomy , engineering , biology
In this article, we analyze the frequency characteristics of electron conductivity in localized states of the 2 dimensional electron gas (2DEG) in MOS inversion layer under the condition of quantized limit. Based on the frequency dependence of Fermi distribution function, we derived the frequency characteristics of the two dominant conduction processes, i.e., the conductivity due to the process of thermally exciting to the mobility edge, σME (ω),and that due to variable range hopping process, σVRH(ω). We found that σME(ω) and σVRH (ω) are both complex functions. The time constant of σME(ω), τn, is longer, corresponding to a low frequency process. And that of σVRH(ω) is much shorter, corresponding to high frequency process. The theoretical curve is compared with experimental data. It is found that in order to fit the theoretical curve to the experimental one, the time constant τn should be approximately 3.6 ×10-6 s.