Open AccessSTUDY ON A PLANE-LIKE PRECIPITATE IN SILICON SINGLE CRYSTAL BY X-RAY TOPOGRAPHIC METHOD
Author(s) -
Xi Chen,
Mai Zhang,
Dai Daoyang,
Shujuan Cui,
Peiwen Ge
Publication year - 1987
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.36.408
Subject(s) - silicon , materials science , x ray , crystal (programming language) , section (typography) , position (finance) , single crystal , plane (geometry) , optics , matrix (chemical analysis) , crystallography , geometry , optoelectronics , physics , computer science , composite material , chemistry , finance , mathematics , economics , programming language , operating system
A plan-like precipitate in silicon single crystal was investigated by means of X-ray section topography. limited topography, dilatation topography and SEM. The configuration and position of the defect in matrix were determined. And a breief analysis about its formation is also presented.