STUDY ON A PLANE-LIKE PRECIPITATE IN SILICON SINGLE CRYSTAL BY X-RAY TOPOGRAPHIC METHOD | Zendy

Chu Xi | Zendy; MAI ZHEN-HONG | Zendy; Dai Daoyang | Zendy; CUI SHU-FAN | Zendy; Peiwen Ge | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

STUDY ON A PLANE-LIKE PRECIPITATE IN SILICON SINGLE CRYSTAL BY X-RAY TOPOGRAPHIC METHOD

Author(s) -

Chu Xi,

MAI ZHEN-HONG,

Dai Daoyang,

CUI SHU-FAN,

Peiwen Ge

Publication year - 1987

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.36.408

Subject(s) - silicon , materials science , x ray , crystal (programming language) , section (typography) , position (finance) , single crystal , plane (geometry) , optics , matrix (chemical analysis) , crystallography , geometry , optoelectronics , physics , computer science , composite material , chemistry , finance , mathematics , economics , programming language , operating system

A plan-like precipitate in silicon single crystal was investigated by means of X-ray section topography. limited topography, dilatation topography and SEM. The configuration and position of the defect in matrix were determined. And a breief analysis about its formation is also presented.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research