STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS | Zendy

Wanlu Wang | Zendy; Kejun Liao | Zendy

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STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS

Author(s) -

Wanlu Wang,

Kejun Liao

Publication year - 1987

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.36.1529

Subject(s) - materials science , annealing (glass) , heterojunction , amorphous solid , stress (linguistics) , silicon , substrate (aquarium) , composite material , ultimate tensile strength , amorphous silicon , compressive strength , optoelectronics , crystallography , crystalline silicon , chemistry , linguistics , philosophy , oceanography , geology

We have found experimentally that the stress in a-Si:H films is Compressive, and tensile in a-SiNx:H film on the flate silicon substrate with certain content of Si-H bond. The stress in a-Si:H/a-SiNx:H/c-Si system can be made to reach a minimum by suitably chosing some conditions of depositing. The minimum stress may keep for a long time. It is shown that the stress changes with annealing temperature. Some explanation to these results are also given.

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