Open AccessSTRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS
Author(s) -
Wanlu Wang,
Kejun Liao
Publication year - 1987
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.36.1529
Subject(s) - materials science , annealing (glass) , heterojunction , amorphous solid , stress (linguistics) , silicon , substrate (aquarium) , composite material , ultimate tensile strength , amorphous silicon , compressive strength , optoelectronics , crystallography , crystalline silicon , chemistry , linguistics , philosophy , oceanography , geology
We have found experimentally that the stress in a-Si:H films is Compressive, and tensile in a-SiNx:H film on the flate silicon substrate with certain content of Si-H bond. The stress in a-Si:H/a-SiNx:H/c-Si system can be made to reach a minimum by suitably chosing some conditions of depositing. The minimum stress may keep for a long time. It is shown that the stress changes with annealing temperature. Some explanation to these results are also given.