Open AccessINFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTON
Author(s) -
Du Yongchang,
Ming Yan,
Yufeng Zhang,
Guo Hai,
Keliang Hu
Publication year - 1987
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.36.1427
Subject(s) - deuterium , silicon , hydrogen , materials science , infrared spectroscopy , proton , infrared , doping , passivation , absorption (acoustics) , acceptor , excited state , atomic physics , chemistry , nanotechnology , optoelectronics , optics , physics , organic chemistry , quantum mechanics , layer (electronics) , condensed matter physics , composite material
FTIR was employed to study doped silicon passivated by atomic hydrogen, deuterium and implanted by proton. The localized vibrational modes of [BD] pairs, 1.560 cm-1 and 1263 cm-1, were excited with different passivation conditions of atomic deuterium. This shows that there are at least two possible positions for deuterium atoms around acceptor B. IR absorption spectra of doped silicon implanted by proton are different from that of undoped silicon, the hydrogen atoms prefer bonding around B acceptors. Only 1% implanted hydrogen atoms were turned into photoactive centers, most of implanted hydrogen atoms formed non-photoactive cen-ters, they might be hydrogen molecules, Hz.