Open AccessREFLECTIVE THIRD-HARMONIC GENERATION AND CRYSTAL SYMMETRY
Author(s) -
Huo Chong-Ru,
C. C. Wang,
J. L. Bomback,
John V. James
Publication year - 1987
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.36.1416
Subject(s) - crystal (programming language) , ion , materials science , silicon , semiconductor , optics , atomic physics , single crystal , rotational symmetry , condensed matter physics , ion implantation , harmonic , molecular physics , optoelectronics , physics , nuclear magnetic resonance , quantum mechanics , computer science , programming language , mechanics
Optical third harmonic radiation has been measured in reflection from Surfaces of Single crystal and ion implanted silicon samples. As was proved in our theoretical Calculation, the linearly polarized third harmonic intensity exhibits the rotational symmetry of the crystal as the crystal rotates about its surface normal. There is a critical implant etose in lightly implanted samples. The rotational dependence of the thirel Larmonic radiation is found to vanish when the ion dose exceeds the critical value. As a function of the implant dose, the third harmonic intensity is very sensitive to lattice damage. It is possihle to use the third harmonic technique for monitor of ion implant uniformity in semiconductor device technology.