HOT CARRIER RELAXATION PROCESSES IN GaAs-GaAlAs MULTIPLE QUANTUM WELL STRUCTURES | Zendy

XU ZHONG-YING | Zendy; Yuzhang Li | Zendy; XU JUN-YING | Zendy; Xu Jizong | Zendy; Baozhen Zheng | Zendy; Weihua Zhuang | Zendy; Ge Weikun | Zendy

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HOT CARRIER RELAXATION PROCESSES IN GaAs-GaAlAs MULTIPLE QUANTUM WELL STRUCTURES

Author(s) -

XU ZHONG-YING,

Yuzhang Li,

XU JUN-YING,

Xu Jizong,

Baozhen Zheng,

Weihua Zhuang,

Ge Weikun

Publication year - 1987

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.36.1336

Subject(s) - relaxation (psychology) , phonon , condensed matter physics , materials science , quantum well , luminescence , time constant , spectroscopy , electron , constant (computer programming) , optoelectronics , physics , optics , quantum mechanics , laser , psychology , social psychology , electrical engineering , engineering , computer science , programming language

By using of the nonlinear luminescence correlation technique, a new time resolved optical spectroscopy technique has been developed and applied to investigating of hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures. It has been found that the well width has a significant effect on the relaxation processes. For a sample with Lz=40?, the time constant of the LO-phonon relaxation was found to be as long as 40ps. The physical me-chanism of this weakened electron-phonon interaction is also discussed.

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