Open AccessHOT CARRIER RELAXATION PROCESSES IN GaAs-GaAlAs MULTIPLE QUANTUM WELL STRUCTURES
Author(s) -
Zhijun Xu,
Yuzhang Li,
Xu Jun-Ying,
Jian Xu,
Bizhang Zheng,
Wei Zhuang,
Weikun Ge
Publication year - 1987
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.36.1336
Subject(s) - relaxation (psychology) , phonon , condensed matter physics , materials science , quantum well , luminescence , time constant , spectroscopy , electron , constant (computer programming) , optoelectronics , physics , optics , quantum mechanics , laser , psychology , social psychology , electrical engineering , engineering , computer science , programming language
By using of the nonlinear luminescence correlation technique, a new time resolved optical spectroscopy technique has been developed and applied to investigating of hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures. It has been found that the well width has a significant effect on the relaxation processes. For a sample with Lz=40?, the time constant of the LO-phonon relaxation was found to be as long as 40ps. The physical me-chanism of this weakened electron-phonon interaction is also discussed.